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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB863
DESCRIPTION With TO-3P(I) package Complement to type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -10 -1 100 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IC=0;f=1MHz ; VCB=-10V 55 25 15 400 MIN -140 -0.60 -0.96 TYP.
2SB863
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V
-2.0 -1.5 -5.0 -5.0 160 |I |I
V V A A
MHz pF
hFE-1 Classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB863
Fig.2 Outline dimensions (unindicated tolerance: A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB863
4


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